发明名称 |
SEMICONDUCTOR DEVICES INCLUDING THROUGH SILICON VIA ELECTRODES AND METHODS OF FABRICATING THE SAME |
摘要 |
A semiconductor device may include a semiconductor substrate, a through via electrode, and a buffer. The through via electrode may extend through a thickness of the semiconductor substrate with the through via electrode surrounding an inner portion of the semiconductor substrate so that the inner portion of the semiconductor substrate may thus be isolated from the outer portion of the semiconductor substrate. The buffer may be in the inner portion of the semiconductor substrate with the through via electrode surrounding and spaced apart from the buffer. Related methods are also discussed. |
申请公布号 |
US2013127019(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201213610296 |
申请日期 |
2012.09.11 |
申请人 |
LEE DOSUN;PARK BYUNG LYUL;CHOI GILHEYUN;MOON KWANGJIN;PARK KUNSANG;BANG SUKCHUL;SON SEONGMIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DOSUN;PARK BYUNG LYUL;CHOI GILHEYUN;MOON KWANGJIN;PARK KUNSANG;BANG SUKCHUL;SON SEONGMIN |
分类号 |
H01L23/52 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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