| 摘要 |
In the present invention, a voltage resistance region is formed in a manner so as to encircle a logical circuit formation region, high-voltage-resistance MOSFETs (71, 72) for level shifting are formed at a portion of the voltage resistance region, a p-opening region (131) is formed between the drain region of the high-voltage-resistance MOSFETs (71, 72) and the logical circuit formation region, and a shield layer (300) that connects to the negative electrode side of an electricity source connected to the logical circuit formation region is disposed on the p-opening region (131). As a result, it is possible to provide a high-voltage-resistance semiconductor device having a level shift circuit capable of a stable operation in long-term reliability and during switching of a high-voltage-resistance IC. |
