| 摘要 |
A high-voltage integrated circuit device can include, in a surface layer of a p semiconductor substrate, an n region which is a high-side floating-potential region, an n- region which becomes a high-voltage junction terminating region, and an n- region which is an L-VDD potential region. A low-side circuit portion can be disposed in an n- region. Below a pickup electrode disposed in the high-voltage junction terminating region, a universal contact region in Ohmic contact with the pickup electrode can be disposed. The universal contact region has a p+ region and an n+ region that can be disposed in alternating contact along a surface of the p semiconductor substrate. By disposing the universal contact region in this way, the quantity of carriers flowing into the low-side circuit portion can be reduced when a negative surge voltage is input. Consequently, erroneous operation due to latchup of a logic portion can be minimized.
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