| 摘要 |
A method for producing a solar cell (100, 200) is provided, comprising the steps of providing a crystalline silicon substrate (101, 201); doping at least a first region of the silicon substrate (101, 201) to create a base (102, 202) and a second region of the silicon substrate (101, 201) to create an emitter (103, 203); forming a combination layer (105, 205) for carrying out a plasma nitriding or plasma oxinitriding process in a plasma of NH3, N2O or a mixture of these gases to create a base film (105a, 205a) of amorphous SiNx or amorphous SiOxNy and immediately carrying out a PECVD process that follows on directly after the plasma nitriding or plasma oxinitriding process and uses at least one silicon-containing process gas to deposit a top silicon layer (105b, 205b) of amorphous SiNx, amorphous SiCxNy or amorphous SiOxNy; and contacting the base (102, 202) and the emitter (103, 203), and a solar cell (100, 200) is provided, comprising a crystalline silicon substrate (101, 201) with a base (102, 202), an emitter (103, 203) and contacts (106, 107, 206, 207), wherein the solar cell (100, 200) also has a combination layer (105, 205) comprising a base film (105a, 205a) of amorphous SiNx or amorphous SiOxNy, which can be created by plasma nitriding or plasma oxinitriding in a plasma of NH3, N2O or a mixture of these gases and is applied at least in certain portions directly on the surface of the crystalline silicon substrate (101, 201), and comprising a top silicon layer (105b, 205b) of amorphous SiNx, amorphous SiCxNy or amorphous SiOxNy, which can be obtained by subsequent PECVD deposition using at least one Si-containing process gas and is directly adjacent to the base film (105a, 205a). |
