| 摘要 |
<p>Disclosed is a method for manufacturing a substrate for forming an element, said substrate having a Ge layer or a SiGe layer formed on an insulating film. A Si film (12) is formed on a surface of a Ge substrate (11), a high-dielectric constant insulating film (13) is formed on the Si film (12), the Ge substrate (11), which has the Si film (12) and the high-dielectric constant insulating film (13) formed thereon, and a supporting substrate (21), which has an oxide film (22) formed on a surface thereof, are bonded by bringing the high-dielectric constant insulating film (13) and the oxide film (22) into contact with each other, and the Ge substrate (11) bonded to the supporting substrate (21) is made thin by polishing the Ge substrate (11) from the rear surface side thereof.</p> |
