CMOS DEVICE CAPABLE OF REDUCING CHARGE COLLECTION COLLECTED BY RADIATION AND PREPARATION METHOD THEREOF

摘要

The invention discloses a CMOS device capable of reducing charge collection generated by radiation and preparation method thereof. The CMOS device provided by the invention is provided with a heavily doped charge restriction collecting region vertically below a source region and a drain region, the doping type of the charge restriction collecting region is opposite to those of the source region and the drain region, and the doping concentration is greater than or equal to those of the source region and the drain source. The transverse range of the charge restriction collecting region is slightly less than or equal to those of the source region and the drain region, and the transverse position of a channel is not more than the edges of the source region and the drain region. The CMOS device provided by the invention can greatly decrease the 'hopper' range generated under the action of single particle so that the instantaneously collected charge can be decreased under the action of the electric field. As the width of a depletion layer is narrowed, the electron-hole pairs in the 'hopper' range is more difficult to diffuse to the edge of the depletion layer, thus the charge collected by a sensitive node can be greatly reduced and the influence of the single particle transient state on the integrated circuit can be effectively restrained.