| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a high-quality SOI substrate and a bonding apparatus used for the manufacture, which suppresses a defective mount region formed when a single-crystal semiconductor substrate is peeled off from a base substrate due to an air layer remaining at an interface between the single-crystal semiconductor substrate and the base substrate. <P>SOLUTION: By bonding a bonding substrate with inclination to an installation surface of a base substrate, a position where the bonding is started can be restricted. The bonding substrate is installed in a manner that a part of the bonding substrate beyond a supporting table is the closest to the base substrate. Thus, the supporting table does not exist below a portion where the bonding substrate and the base substrate are in contact with each other and the part of the bonding substrate is in a floating state from the supporting table with an end of the supporting table serving as a supporting point, so that the bonding proceeds sequentially starting from the portion close to the base substrate. Therefore, bonding can be stably performed without the air layer remaining at the interface between the bonding substrate and the base substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
