| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition useful for EUV or EB and to provide a method for forming a resist pattern using the resist composition. <P>SOLUTION: The resist composition for EUV or EB contains a base component (A) that generates an acid by exposure and shows changes in the solubility with a developing solution by an action of an acid. The base component (A) contains a polymer compound (A1) having a structural unit (a0) containing a group expressed by general formula (a0-1) or (a0-2). The resist composition contains, in addition to the base component (A), a photo-reactive quencher (C). In the formulae, -R<SP POS="POST">3</SP>-S<SP POS="POST">+</SP>(R<SP POS="POST">4</SP>)(R<SP POS="POST">5</SP>) includes only one aromatic ring or no aromatic ring as a whole; and M<SP POS="POST">m+</SP>includes only one aromatic ring or no aromatic ring. <P>COPYRIGHT: (C)2013,JPO&INPIT |
