发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method which can achieve high reliability by inhibiting occurrence of voids. <P>SOLUTION: A semiconductor device manufacturing method comprises: an alignment process of aligning a semiconductor chip on which bump electrodes having solder tips on a substrate via a bonding material; a contact process of performing heating at a low temperature lower than a solder melting point to contact the bump electrodes and electrode parts of the substrate without completely curing the bonding material; a void removing process of heating the semi-cured bonding material under a pressure atmosphere to remove voids; and an electrode bonding process of performing heating at a temperature equal to or higher than the solder melting point to bond the bump electrodes of the semiconductor chip and the electrode parts of the substrate by melting. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013102092(A) 申请公布日期 2013.05.23
申请号 JP20110245721 申请日期 2011.11.09
申请人 SEKISUI CHEM CO LTD 发明人 HATAI MUNEHIRO;SADANAGA SHUJIRO;DILAO CARL ALVIN;WAKIOKA SAYAKA;NISHIMURA YOSHIO;TAKEDA KOHEI
分类号 H01L21/60 主分类号 H01L21/60
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