发明名称 |
DIODE LASER AND METHOD FOR MANUFACTURING A HIGH-EFFICIENCY DIODE LASER |
摘要 |
A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.
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申请公布号 |
US2013128911(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201213682848 |
申请日期 |
2012.11.21 |
申请人 |
FORSCHUNGSVERBUND BERLIN E.V.;FORSCHUNGSVERBUND BERLIN E.V. |
发明人 |
BROX OLAF;BUGGE FRANK;CRUMP PAUL;ERBERT GOETZ;MAASSDORF ANDRE;SCHULTZ CHRISTOPH M.;WENZEL HANS;WEYERS MARKUS |
分类号 |
H01L33/10;H01L33/00;H01S5/187 |
主分类号 |
H01L33/10 |
代理机构 |
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地址 |
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