| 摘要 |
The present disclosure provides an IGZO nanoparticle, including an InGaZnO4 crystal structure and a trace element, wherein the InGaZnO4 crystal structure has a formula represented by formula: x(In2O3)-y(Ga2O3)-z(ZnO), wherein x:y:z=1:1:0.5-2, and the trace element includes boron and/or aluminum, which is present in an amount of about 100-1000 ppm. The present disclosure also provides a manufacturing method for the IGZO nanoparticle and a sputter target containing the IGZO particles.
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