<p>A MOS device assembly comprising at least a first transistor (110) and a second transistor (111), each having a gate region. The dimensions of the gate region of the first transistor are different from the dimensions of the gate region of the second transistor and the transconductance of the MOS device assembly is substantially uniform when the gate regions of the first and second transistors are biased using the same voltage.</p>
申请公布号
WO2013071959(A1)
申请公布日期
2013.05.23
申请号
WO2011EP70176
申请日期
2011.11.15
申请人
X-FAB SEMICONDUCTOR FOUNDRIES AG;TONER, BRENDAN;CHU, TSUI PING;LIEW, FOO SEN