发明名称 |
OPERATING CONTROL METHOD OF NON-VOLATILE MEMORY DEVICE, MEMORY CONTROLLER OF THE SAME AND MEMORY SYSTEM INCLUDING THE SAME |
摘要 |
PURPOSE: A method for controlling the operation of a nonvolatile memory device, a memory controller thereof, and a memory system including the same are provided to improve the reliability of data by reflecting a coupling effect on a memory cell when the data is read. CONSTITUTION: Evaluation information and a selection signal are generated by evaluating the state of a memory cell from state register information(S12). A command control signal is generated based on the selection signal and the evaluation information about read data(S13). A nonvolatile memory cell is read by using a second read voltage(S14). CPL GI information is generated from data reliability determination bits determining the reliability of the read data, additional data, and a selection signal(S15). A state value of the nonvolatile memory cell is generated based on the data reliability determination bits, the CPL GI information, and the evaluation information(S16). An error correction decoding operation is performed on the state value and the decoding information is reflected on an evaluation process if the decoding operation is failed(S19). [Reference numerals] (S13) Output a CMD control signal according to each case; (S14) Perform NAND READ based on the CMD control signal; (S19) Reflect Decoding info to NVM Estimation |
申请公布号 |
KR20130053287(A) |
申请公布日期 |
2013.05.23 |
申请号 |
KR20110119020 |
申请日期 |
2011.11.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
EUN, HEE SEOK;KIM, JAE HONG;PARK, HYUNG JOON;YOO, YOUNG KWANG |
分类号 |
G11C16/34;G11C16/06 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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