| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lithographic mask that has a structure used to pattern a protective barrier structure on a semiconductor wafer and has a region in the mask insulated. <P>SOLUTION: The lithographic mask includes a first layer formed of a conductor and having a groove and a second layer including a region, a section, and a grooved transparent structure surrounding the section. The first layer and second layer are so formed as to reduce a difference in electric potential of the second layer, the grooved transparent structure separates the section and region from each other, and materials of the first layer and second layer are so selected that no difference in electric potential is generated between the section and the region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
