| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the concentration of an impurity element included in an oxide semiconductor film in the vicinity of a gate insulation film, improve the crystallinity of the oxide semiconductor film in the vicinity of the gate insulation film, and provide a semiconductor device with stable electric characteristics by using the oxide semiconductor film. <P>SOLUTION: A semiconductor device includes: a base insulation film; an oxide semiconductor film formed on the base insulation film; a source electrode and a drain electrode formed on the oxide semiconductor film; a gate insulation film including silicon oxide formed on the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode provided in contact with the gate insulation film and in a region overlapping with at least the oxide semiconductor film. The oxide semiconductor film has a region where the silicon concentration is 1.0 at% or less from the interface with the gate insulation film toward the oxide semiconductor film, and includes a crystal part at least in the region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
