| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor having a microstructure with a high yield, and to improve ON characteristics of the transistor to provide a semiconductor device allowing high-speed response and high-speed drive. <P>SOLUTION: An oxide semiconductor layer, a gate insulating layer, a gate electrode layer, an insulating layer, a conductive film, and an interlayer insulating layer are sequentially stacked. By cutting the conductive film, the conductive film over the gate electrode layer and the insulating layer is removed to form a source electrode layer and a drain electrode layer with self-alignment. Electrode layers are provided so as to overlap regions in contact with the source and drain electrode layers and to be in contact with the oxide semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
