SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for high power application using a new semiconductor material with high mass productivity.

SOLUTION: Using a GRTA apparatus, a first oxide semiconductor film is heated. Oxygen is added to the heated first oxide semiconductor film to form a second oxide semiconductor film. Using the GRTA apparatus, the oxygen-added second oxide semiconductor film is heated. The GRTA apparatus is an apparatus for heat treatment using a high-temperature gas, and the use of the GRTA apparatus enables high-temperature heat treatment in a short time.

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