发明名称 POLYIMIDE PRECURSOR COMPOSITION, AND WIRING CIRCUIT SUBSTRATE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a polyimide precursor composition having a low linear expansion coefficient and a low moisture absorption expansion coefficient, and causing no exfoliation after curing, and excellent in PI etchability. <P>SOLUTION: The polyimide precursor composition contains (A) component and at least one of (B) and (C) components wherein the proportion of the (B) and (C) component is 30 to 100 pts.wt. to 100 pts.wt. of the (A) component. (A): a polyimide precursor having (a1) a structural unit of a polyamide acid from 3,3'-4,4'-biphenyltetracarboxylic dianhydride and p-phenylenediamine, and (a2) a structural unit of a polyamide acid from 3,3'-4,4'-biphenyltetracarboxylic dianhydride and 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl in a molar ratio of (a1)/(a2)=20/80 to 70/30. (B): an acrylate compound having a cyclohexanedicarbxyimide structure. (C): a polyethylene glycolic compound. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013100441(A) 申请公布日期 2013.05.23
申请号 JP20110246093 申请日期 2011.11.10
申请人 NITTO DENKO CORP 发明人 HISHIKI TOMOAKI;HIKITA TAKAMI;SAKAKURA TAKATOSHI
分类号 C08L79/08;C08G73/10;C08K5/3417;C08K5/3432;C08L71/02;H05K3/28 主分类号 C08L79/08
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