| 摘要 |
This surface potential sensor is provided with an electret electrode (28), which is configured of a metal film (26) and an electret film (27), said electret electrode being provided on an upper surface of a diaphragm (25) of a semiconductor substrate. Four piezoresistors (29a, 29b, 29c, 29d) are formed on the diaphragm (25), and a distortion quantity detecting unit (32) is configured by forming a bridge circuit using the piezoresistors. Since an electrostatic force that operates between an object and the electret electrode (28) changes corresponding to potential of the object, and the electret electrode (28) warps corresponding to the change, the potential of the object can be detected by measuring a distortion quantity of the electret electrode (28) by means of the distortion quantity detecting unit (32). Consequently, not only the potential of the object but also a polarity thereof can be detected with reduced size and high sensitivity. |
