METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS

摘要

The present invention relates to a method for producing silicon carbide single crystals. Growth of silicon carbide single crystals on silicon carbide seed crystals is promoted by depositing a solid carbonaceous substance on the surface of the silicon carbide seed crystals and heating the crystals in a silicon monoxide gas atmosphere in order to control the ratio of voids, impurities, and the like present at the growth surface of the silicon seed crystals on which the silicon carbide single crystals grow. Specifically, a solid carbonaceous substance is deposited on the surface of silicon carbide seed crystals (step 100) and then the silicon carbide seed crystals on the surface of which a solid carbonaceous substance has been deposited is heated to a predetermined temperature in a silicon monoxide gas atmosphere (steps 102 to 106).