发明名称 METHOD OF OPERATING NON-VOLATILE MEMORY DEVICES
摘要 PURPOSE: A method for operating a nonvolatile memory device is provided to reduce copyback program time by programming the randomized data in a target region of a memory cell array after the randomized data is simultaneously derandomized and randomized. CONSTITUTION: First random data randomized based on first random sequence data is sensed in a source region of a memory cell array(S110). Third random sequence data generated based on the first random sequence data and second random sequence data is loaded in a page buffer circuit(S120). The first random sequence data and the third random sequence data sensed in the page buffer circuit are logically operated(S130). Second random data is programmed in a target region of the memory cell array(S140). [Reference numerals] (AA) Start; (BB) End; (S110) Sense a first random data randomized based on first random sequence data in a source region of a memory cell array; (S120) Load third random sequence data generated based on the first random sequence data and second random sequence data in a page buffer circuit; (S130) Logically operate the data sensed in the page buffer circuit and the third random sequence data; (S140) Program second random data in a target region of the memory cell array through logic operation
申请公布号 KR20130052971(A) 申请公布日期 2013.05.23
申请号 KR20110118365 申请日期 2011.11.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOON, SANG YONG;KIM, BO GEUN;SHIN, SEUNG HWAN
分类号 G11C16/06;G11C16/10;G11C16/26 主分类号 G11C16/06
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