| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium oxide-zinc oxide sputtering target or an aluminum oxide-zinc oxide sputtering target containing at least either one of Pb and Cd. <P>SOLUTION: A gallium oxide-zinc oxide sputtering target and an aluminum oxide-zinc oxide sputtering target can have a high sintered density even if the sintering temperature is low, for example, about 1300°C. Consequently, sintering of a starting material powder at a high temperature is not necessary in order to obtain a high sintered density, and so the burden on the sintering furnace is low, and early degradation of the sintering furnace can be avoided. Also, the volatilization of zinc and other components can be suppressed from the starting material powder, and a film having a planned composition can be easily formed. Additionally, the sputtering target has a low specific resistance. Furthermore, the sputtering target has a low percentage of reduction in sputter rate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
