| 摘要 |
[Problem] To provide: a semiconductor device which is capable of preventing the formation of voids in a through electrode and has higher reliability in comparison to conventional semiconductor devices; a method for manufacturing the semiconductor device; and an electronic component. [Solution] An electrode layer (51) is formed on a gate insulating film (30) on an Si substrate (29). After forming an interlayer insulating film (31) on the gate insulating film (30), a lower pad (40), which comprises a lower wiring line (42) that is in the same pattern as the electrode layer (51) and a lower insulating film (43) that is in the opposite pattern of the pattern of the electrode layer (51), is formed by a damascene method. Next, a through hole (59) is formed, and a first interlayer insulating film (32), which is provided with a projected portion (60) that is in the same pattern as the lower insulating film (43), is exposed within the through hole (59) at the same time. After etching the first interlayer insulating film (32) so that a part of the projected portion (60) remains as an etching residue, a via insulating film (38) is formed and the via insulating film (38) at the bottom of the through hole (59) is etched. After that, a through electrode (17) is formed by plating an electrode material on the inner side of the via insulating film (38) on the through hole (59). |
