| 摘要 |
<p>Forming dielectric layer on a substrate (2), comprises generating plasma between a plasma electrode and the substrate from a process gas, and forming dielectric layer on the substrate by at least partial chemical reaction of substrate and process gas and/or at least partial deposition of the process gas components on the substrate, where the distance between the plasma electrode and the substrate during chemical reaction and/or deposition of the process gas components is varied. Forming dielectric layer on a substrate, comprises generating plasma between a plasma electrode and the substrate from a process gas, and forming dielectric layer on the substrate by at least partial chemical reaction of substrate and process gas and/or at least partial deposition of the process gas components on the substrate, where the distance between the plasma electrode and the substrate during chemical reaction and/or deposition of the process gas components is varied, where the distance between a first distance at the beginning of the chemical reaction to a second distance and the second distance to a third distance is varied, where the first distance is greater than the second distance and the second distance is less than the third distance. An independent claim is also included for forming the dielectric layer by oxidation and/or nitridation of the substrate, in which the plasma is generated from the process gas by at least one plasma electrode adjacent to the substrate, where the substrate is potential free and does not lies between electrodes of at least one plasma electrode, and a interrelationship between the substrate and the plasma is varied such that initially a radical reaction prevails, then an anodic reaction, and finally the radical reaction.</p> |
