STRAINED STRUCTURES OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A strained structure of a semiconductor device is provided to improve performance by arranging an STI on one surface of a gate stack. CONSTITUTION: A substrate includes a main surface. A gate stack(210) is formed on the main surface of the substrate. An STI(Shallow Trench Isolation)(204) is arranged on one surface of the gate stack. A cavity(222) is filled with a strained structure. The strained structure is distributed between the gate stack and the STI.