GROUP III NITRIDE LIGHT EMITTING DEVICE HAVING LIGHT EMITTING REGION WITH DOUBLE HETERO-STRUCTURE

摘要

PROBLEM TO BE SOLVED: To develop a group III nitride semiconductor light emitting device having high efficiency in high current density.

SOLUTION: A group III nitride light emitting layer is disposed between an n-type region and a p-type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers.

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