发明名称 |
METHOD AND APPARATUS FOR ATOMIC HYDROGEN SURFACE TREATMENT DURING GaN EPITAXY |
摘要 |
Methods and apparatus for generating and delivering atomic hydrogen to the growth front during the deposition of a III-V film are provided. The apparatus adapts HWCVD technology to a system wherein the Group III precursor and the Group V precursor are delivered to the surface in isolated processing environments within the system. Multiple HWCVD units may be incorporated so that the atomic hydrogen parameters may be varied in a combinatorial manner for the development of III-V films.
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申请公布号 |
US2013130481(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201113302001 |
申请日期 |
2011.11.22 |
申请人 |
CHUA THAI CHENG;FRANKLIN TIMOTHY JOSEPH;KRAUS PHILIP;INTERMOLECULAR, INC. |
发明人 |
CHUA THAI CHENG;FRANKLIN TIMOTHY JOSEPH;KRAUS PHILIP |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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