发明名称 |
Extending Radiation Tolerance By Localized Temperature Annealing Of Semiconductor Devices |
摘要 |
A method of increasing the operating life of a semiconductor device that is to be used in a harsh ionizing radiation environment including determining heating criteria for annealing the device; installing the device in an electronic apparatus; and heating the installed device with a local heating source in accordance with the heating criteria.
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申请公布号 |
US2013126508(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201113309393 |
申请日期 |
2011.12.01 |
申请人 |
SALZMAN JAMES FRED;HADSELL CHARLES CLAYTON;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SALZMAN JAMES FRED;HADSELL CHARLES CLAYTON |
分类号 |
H05B1/00;G08B17/10;H01L21/66 |
主分类号 |
H05B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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