发明名称 |
COMPOSITIONALLY GRADED DILUTE GROUP III-V NITRIDE CELL WITH BLOCKING LAYERS FOR MULTIJUNCTION SOLAR CELL |
摘要 |
A dilute Group III-V nitride solar cell is provided for use in a multijunction solar cell having a p-n junction formed by p-type and n-type layers of dilute Group III-V nitride material, such as GaNAs. Blocking layers of a group III-V ternary alloy are formed on opposing surfaces of the p-n junction to improve the electron and hole collection efficiency of the p-n junction by preventing the flow of electrons and holes, respectively, into the adjacent layers of the multijunction solar cell in certain directions. The III-V nitride solar cell is current matched to other solar cells of the multijunction solar cell. The III-V nitride solar cell may possess a bandgap of approximately 1.0 eV to serve as one junction of the multijunction solar cell. The p-type and n-type layers may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection. |
申请公布号 |
WO2013043875(A3) |
申请公布日期 |
2013.05.23 |
申请号 |
WO2012US56343 |
申请日期 |
2012.09.20 |
申请人 |
ROSESTREET LABS ENERGY, INC.;WALUKIEWICZ, WLADYSLAW;YU, KIN MAN |
发明人 |
WALUKIEWICZ, WLADYSLAW;YU, KIN MAN |
分类号 |
H01L31/0735;H01L31/042;H01L31/0725 |
主分类号 |
H01L31/0735 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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