| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist- or photoresist residue-removing composition used in a copper wiring process, having low corrosiveness to copper wiring and excellent ability of removing a copper oxide-based compound residue and a silicon oxide-based compound residue. <P>SOLUTION: A resist residue-removing composition contains: at least one kind selected from the group consisting of phosphoric acid, phosphoric acid salts, sulfuric acid and sulfuric acid salts; at least one kind selected from the group consisting of citric acid, malic acid, lactic acid, succinic acid, malonic acid and acetic acid; a salt of hydrofluoric acid such as hydrofluoric acid and/or ammonium fluoride, in an amount of 0.01 to 2 wt.% relative to the total amount of the composition; and water. <P>COPYRIGHT: (C)2013,JPO&INPIT |
