| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymeric compound, a resist composition and a method for forming a resist pattern, excellent in sensitivity, resolution, lithographic characteristics and etching durability. <P>SOLUTION: A resist composition comprises: a base component (A) containing a polymeric compound which has a structural unit expressed by (a5-0) and the solubility of which in a developer is changed by an action of an acid; and an acid generator component (B) that generates an acid by exposure. In the formula (a5-0), R represents a hydrogen atom, an alkyl group or a halogenated alkyl group. R<SP POS="POST">1</SP>represents a sulfur atom or an oxygen atom. R<SP POS="POST">2</SP>represents a single bond or a divalent linking group. Y represents an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a polycyclic group. <P>COPYRIGHT: (C)2013,JPO&INPIT |
