| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of being driven at a comparatively low threshold voltage while inhibiting reduction in an optical output; and provide a manufacturing method of the semiconductor laser element. <P>SOLUTION: An edge emitting semiconductor laser element 11 comprises: an active layer 3 provided above a principal surface 1a of a support substrate 1 composed of a hexagonal semiconductor; a p-type nitride semiconductor region 4 provided on the active layer 3: and an ITO electrode 5a provided on the p-type nitride semiconductor region 4. A p-side clad layer 4c of the p-type nitride semiconductor region 4 has a film thickness in a range from not less than 0.18 μm to not more than 0.22 μm. The ITO electrode 5a has an optical absorption coefficient of not less than 2.5×10<SP POS="POST">3</SP>cm<SP POS="POST">-1</SP>and not more than 3.0×10<SP POS="POST">3</SP>cm<SP POS="POST">-1</SP>with respect to light having an oscillation wavelength of the active layer 3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
