| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for quickly and surely determining an etching end point by surely detecting a minute change in light emission intensity near the etching end point in an early stage. <P>SOLUTION: A method for determining an end point of etching processing in a plasma etching device comprises: a step S204 of extracting a light of a preset wavelength among plasma lights generated in a vacuum processing chamber, acquiring an emission intensity of the extracted light of the specific wavelength as time-series data, and calculating a regression line on the basis of the acquired time-series data; and a step S206 of calculating a distance in a time-axis direction between the regression line acquired in the step S204 and the time-series data. This method further includes a step S211 of determining the end point of etching processing on the basis of the distance in the time-axis direction acquired in the step S206. <P>COPYRIGHT: (C)2013,JPO&INPIT |
