发明名称 STRIPPING SOLUTION FOR PHOTOLITHOGRAPHY AND PATTERN FORMATION METHOD
摘要 A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.
申请公布号 US2013126470(A1) 申请公布日期 2013.05.23
申请号 US201213664054 申请日期 2012.10.30
申请人 TOKYO OHKA KOGYO CO., LTD.;TOKYO OHKA KOGYO CO., LTD. 发明人 SHIRAI YURIKO;UENO NAOHISA;OHHASHI TAKUYA
分类号 G03F7/42 主分类号 G03F7/42
代理机构 代理人
主权项
地址