SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention provides a method for manufacturing a semiconductor structure and a corresponding semiconductor device. In a replacement gate process, by forming a doped polycrystalline silicon layer above a source/drain region, a contact hole (310) running through an interlayer dielectric layer (300) and an amorphous silicon layer (251). The contact hole (310) at least partially exposes the source/drain region (110) and a contact layer is formed on an exposed area of the source/drain region and on a surface of a side wall of the contact hole in the amorphous silicon layer, reducing the contact resistance of the source/drain region. The contact layer is formed after a high-K dielectric layer is annealed, thereby avoiding that a metal silicide layer is damaged under high temperature.