| 摘要 |
An integrated semiconductor device includes a substrate including a first portion, a second portion, and a third portion; a first waveguide provided on the first portion, the first waveguide including a base portion and a ridge portion provided on the base portion, the base portion containing a first core layer; a second waveguide provided on the second portion, the second waveguide including a first stripe-shaped mesa containing a second core layer; and a third waveguide provided on the third portion, the third waveguide including a second stripe-shaped mesa containing a third core layer. The first stripe-shaped mesa is connected to the base portion and the ridge portion. The first stripe-shaped mesa is connected to the second stripe-shaped mesa. The second core layer is formed integrally with the first core layer. The third core layer is joined to the second core layer by a butt-joint method.
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