发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
There has been a case where peeling occurs if an internal stress of a wiring of a TFT is strong. In particular, the internal stress of a gate electrode largely influences a stress that a semiconductor film receives, and there has been a case where the internal stress becomes a cause of reduction in electric characteristics of a TFT depending on the internal stress. According to the present invention, an impurity element is introduced into a wiring, or both the introduction of an impurity element and heat treatment are performed, whereby the wiring can be controlled to have a desired internal stress. It is effective that the present invention is particularly applied to a gate electrode. Further, it is possible that the introduction of an impurity element and the heat treatment are conducted to only a desired region to conduct control to attain a desired internal stress.
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申请公布号 |
US2013126973(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201213689041 |
申请日期 |
2012.11.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ARAO TATSUYA |
分类号 |
G02F1/1368;H01L27/088;G09F9/30;H01L21/265;H01L21/28;H01L21/3205;H01L21/336;H01L21/77;H01L21/8238;H01L21/84;H01L23/52;H01L27/08;H01L27/092;H01L27/12;H01L27/32;H01L29/49;H01L29/78;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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