发明名称 |
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE |
摘要 |
A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer.
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申请公布号 |
US2013127006(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201113300028 |
申请日期 |
2011.11.18 |
申请人 |
RAJ MADHAN;BROWN RICHARD J.;PRUNTY THOMAS R.;BOUR DAVID P.;KIZILYALLI LSIK C.;NIE HUI;EDWARDS ANDREW P.;ROMANO LINDA;EPOWERSOFT, INC. |
发明人 |
RAJ MADHAN;BROWN RICHARD J.;PRUNTY THOMAS R.;BOUR DAVID P.;KIZILYALLI LSIK C.;NIE HUI;EDWARDS ANDREW P.;ROMANO LINDA |
分类号 |
H01L29/47;H01L21/20 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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