发明名称 |
FLASH MEMORY STORAGE UNIT CAPABLE OF VERIFYING RELIABILITY USING A BYPASS PATH, AND A SYSTEM AND METHOD FOR VERIFYING RELIABILITY OF THE FLASH MEMORY STORAGE UNIT USING SAME |
摘要 |
The present invention relates to a flash memory storage unit including: at least one flash memory chip; a controller for controlling said at least one flash memory chip; a first connector for a first path between said at least one flash memory chip and the controller; and a second connector for a second path between the controller and a test supporting system for testing the flash memory storage unit, wherein the controller verifies reliability of the flash memory storage unit by using the flash memory storage unit which selectively activates at least one of the first path and the second path. |
申请公布号 |
WO2013042972(A3) |
申请公布日期 |
2013.05.23 |
申请号 |
WO2012KR07575 |
申请日期 |
2012.09.21 |
申请人 |
SNU R&DB FOUNDATION |
发明人 |
YOON, JIN HYUK;NAM, EYEE HYUN;MIN, SANG LYUL |
分类号 |
G11C29/00;G11C16/02;G11C16/06 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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