SEMICONDUCTOR DEVICE COMPRISING III-V GROUP BARRIER AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device including a III-V group barrier and a method for manufacturing the same are provided to increase the injection velocity by covering a channel layer with a barrier layer having a large band gap. CONSTITUTION: An insulating layer is separately formed on a substrate. A barrier layer(46) covers the upper and the lateral surface of the protruded part of a material layer(42). The band gap of the barrier layer is larger than that of the material layer. A gate electrode is formed on a gate insulating layer(48). A source and a drain electrode are separated from the gate electrode.