| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor film with more stable electric conductivity, and provide a highly reliable semiconductor device by making the semiconductor device have stable electric characteristics with the use of the oxide semiconductor film. <P>SOLUTION: When an oxide semiconductor film includes a crystalline region whose a-b plane is approximately parallel to a film surface and c-axis is approximately perpendicular to the film surface, the oxide semiconductor film has more stable electric characteristics relative to the visible light, UV light, or the like. By the use of the oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
