| 摘要 |
A process for the continual and/or sequential deposition of a dielectric layer from the gas phase onto a substrate is described. In the process, a microwave plasma is generated by means of at least one microwave electrode, the substrate is placed in a region outside the microwave plasma in which an electron concentration produced by the microwave plasma in the range from 2 to 9 X 1010/cm3 prevails and a precursor gas forming the dielectric layer is conducted onto the surface of the substrate facing the microwave plasma. A process for the continual and/or sequential deposition of a microcrystalline or nanocrystalline diamond layer from the gas phase onto a substrate, in which a microwave plasma is produced by means of at least one microwave electrode, the substrate is placed in a region within the plasma so that the electron concentration at the surface of the substrate is in the range from 10 to 30 X 1010/cm3 and a carbon-containing precursor gas is conducted onto the surface of the substrate facing the microwave plasma, is also described. |
