| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress adherence of foreign particles to a substrate by suppressing agitation of the foreign particles generated in a processing chamber. <P>SOLUTION: A semiconductor device manufacturing method comprises processing a substrate by repeatedly performing cycles each including supply of a process gas from a process gas supply line 1a into a processing chamber and supply of an inert gas from an inert gas supply line 2a into the processing chamber. During substrate processing, the semiconductor device manufacturing method comprises, while maintaining a state of supplying the process gas and the inert gas to the process gas supply line and the inert gas supply line, respectively, exhausting from an inert gas vent line 2b, the inert gas supplied to the inert gas supply line without supplying the inert gas into the processing chamber when supplying the process gas from the process gas supply line into the processing chamber, and exhausting from a process gas vent line 1b, the process gas supplied to the process gas supply line without supplying the process gas into the process chamber when supplying the inert gas from the inert gas supply line into the processing chamber, thereby to make a total gas flow rate constant when repeatedly performing the cycles. <P>COPYRIGHT: (C)2013,JPO&INPIT |
