发明名称 |
METHOD FOR FABRICATING VERTICAL CHANNEL TYPE NONVOLATILE MEMORY DEVICE |
摘要 |
A method for fabricating a vertical channel type nonvolatile memory device includes: stacking a plurality of interlayer insulating layers and a plurality of gate electrode conductive layers alternately over a substrate; etching the interlayer insulating layers and the gate electrode conductive layers to form a channel trench exposing the substrate; forming an undoped first channel layer over the resulting structure including the channel trench; doping the first channel layer with impurities through a plasma doping process; and filling the channel trench with a second channel layer.
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申请公布号 |
US2013130454(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201313746435 |
申请日期 |
2013.01.22 |
申请人 |
SK HYNIX INC.;SK HYNIX INC. |
发明人 |
LEE KI-HONG;JOO MOON-SIG;HONG KWON;HWANG SUN-HWAN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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