发明名称 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 A first semiconductor chip and a second semiconductor chip are overlapped with each other in a direction in which a first multilayer interconnect layer and a second multilayer interconnect layer are opposed to each other. When seen in a plan view, a first inductor and a second inductor are overlapped. The first semiconductor chip and the second semiconductor chip have non-opposed areas which are not opposed to each other. The first multilayer interconnect layer has a first external connection terminal in the non-opposed area, and the second multilayer interconnect layer has a second external connection terminal in the non-opposed area.
申请公布号 US2013130442(A1) 申请公布日期 2013.05.23
申请号 US201313741910 申请日期 2013.01.15
申请人 RENESAS ELECTRONICS CORPORATION;RENESAS ELECTRONICS CORPORATION 发明人 NAKASHIBA YASUTAKA;OGAWA KENTA
分类号 H01L21/56 主分类号 H01L21/56
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