发明名称 Array Of Split Gate Non-volatile Floating Gate Memory Cells Having Improved Strapping Of The Coupling Gates
摘要 An array of non-volatile memory cells with spaced apart first regions extending in a row direction and second regions extending in a column direction, with a channel region defined between each second region and its associated first region. A plurality of spaced apart word line gates each extending in the row direction and positioned over a first portion of a channel region. A plurality of spaced apart floating gates are positioned over second portions of the channel regions. A plurality of spaced apart coupling gates each extending in the row direction and over the floating gates. A plurality of spaced apart metal strapping lines each extending in the row direction and overlying a coupling gate. A plurality of spaced apart erase gates each extending in the row direction and positioned over a first region and adjacent to a floating gate and coupling gate.
申请公布号 US2013126958(A1) 申请公布日期 2013.05.23
申请号 US201113299320 申请日期 2011.11.17
申请人 GHAZAVI PARVIZ;VAN TRAN HIEU;WANG SHIUH-LUEN;DO NHAN;OM'MANI HENRY A.;SILICON STORAGE TECHNOLOGY, INC. 发明人 GHAZAVI PARVIZ;VAN TRAN HIEU;WANG SHIUH-LUEN;DO NHAN;OM'MANI HENRY A.
分类号 H01L27/088 主分类号 H01L27/088
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