发明名称 |
Array Of Split Gate Non-volatile Floating Gate Memory Cells Having Improved Strapping Of The Coupling Gates |
摘要 |
An array of non-volatile memory cells with spaced apart first regions extending in a row direction and second regions extending in a column direction, with a channel region defined between each second region and its associated first region. A plurality of spaced apart word line gates each extending in the row direction and positioned over a first portion of a channel region. A plurality of spaced apart floating gates are positioned over second portions of the channel regions. A plurality of spaced apart coupling gates each extending in the row direction and over the floating gates. A plurality of spaced apart metal strapping lines each extending in the row direction and overlying a coupling gate. A plurality of spaced apart erase gates each extending in the row direction and positioned over a first region and adjacent to a floating gate and coupling gate. |
申请公布号 |
US2013126958(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201113299320 |
申请日期 |
2011.11.17 |
申请人 |
GHAZAVI PARVIZ;VAN TRAN HIEU;WANG SHIUH-LUEN;DO NHAN;OM'MANI HENRY A.;SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
GHAZAVI PARVIZ;VAN TRAN HIEU;WANG SHIUH-LUEN;DO NHAN;OM'MANI HENRY A. |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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