| 摘要 |
<p>An active region (27) is provided on the inside peripheral side of a chip having a thickness (t21) thinner than a thickness (t22) of the outside peripheral side on which a termination structure (26) is provided. On the other main surface of an n- drift region (2), an n field stop region (4), p collector region (11), and collector electrode (12) are provided in that order. The n field stop region (4), p collector region (11), and collector electrode (12) are provided so as to extend from the active region (27) to the termination structure (26). A silicon oxide film (3) is provided on the termination structure (26) between the n field stop region (4) and the p collector region (11). The position (L1) of the silicon oxide film (3) in a first depth direction from the first main surface of the n- drift region (2) is substantially the same as the position (L2) of the collector electrode (12) in the active region (27) in the first depth direction from the first main surface of the n- drift region (2).</p> |
