发明名称 |
Semiconductor chip stack and method for manufacturing the same |
摘要 |
A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer (501) with a thickness of at most 50µm which is separated from a substrate (322) into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50µm which is separated from another substrate to the above device formative layers, and, repeating such transferring process. |
申请公布号 |
EP1432032(A3) |
申请公布日期 |
2013.05.22 |
申请号 |
EP20030029014 |
申请日期 |
2003.12.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;TAKAYAMA, TORU;MARUYAMA, JUNYA;OHNO, YUMIKO |
分类号 |
H01L25/065;H01L25/18;H01L21/02;H01L21/336;H01L21/68;H01L21/683;H01L21/77;H01L21/98;H01L23/373;H01L23/52;H01L25/07;H01L27/00;H01L27/12;H01L29/786 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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