发明名称 Semiconductor chip stack and method for manufacturing the same
摘要 A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer (501) with a thickness of at most 50µm which is separated from a substrate (322) into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50µm which is separated from another substrate to the above device formative layers, and, repeating such transferring process.
申请公布号 EP1432032(A3) 申请公布日期 2013.05.22
申请号 EP20030029014 申请日期 2003.12.16
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;TAKAYAMA, TORU;MARUYAMA, JUNYA;OHNO, YUMIKO
分类号 H01L25/065;H01L25/18;H01L21/02;H01L21/336;H01L21/68;H01L21/683;H01L21/77;H01L21/98;H01L23/373;H01L23/52;H01L25/07;H01L27/00;H01L27/12;H01L29/786 主分类号 H01L25/065
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