发明名称 |
Cell-state determination in phase-change memory |
摘要 |
<p>Methods and apparatus are provided for determining the state of a phase-change memory cell. A plurality of measurements are made on the cell, the measurements being dependent on the sub-threshold current-versus-voltage characteristic of the cell. The measurements are processed to obtain a metric which is dependent on the slope of the sub- threshold current-versus-voltage characteristic. The state of the cell is then determined in dependence on this metric which, unlike absolute cell resistance,is substantially unaffected by drift.</p> |
申请公布号 |
GB2496822(A) |
申请公布日期 |
2013.05.22 |
申请号 |
GB20130004453 |
申请日期 |
2011.08.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EVANGELOS ELEFTHERIOU;ANGELIKI PANTAZI;NIKOLAOS PAPANDREOU;CHARALAMPOS POZIDIS;ABU SEBASTIAN |
分类号 |
G11C13/00;G11C11/56;H01L45/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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