发明名称 Multiple quantum well structure
摘要 A multiple quantum well structure (1) comprises a multiple layer structure comprising alternating well and barrier layers (3, 4) comprising first and second materials respectively stacked in a first direction (z). Each barrier layer has a plurality of holes (6) filled with a third material so to form a plurality of respective bridge regions (9) which connect adjacent well layers. The bridge regions have dimensions of no more than 50 nm in directions (x, y) perpendicular to the first direction.
申请公布号 EP2595193(A1) 申请公布日期 2013.05.22
申请号 EP20110189350 申请日期 2011.11.16
申请人 HITACHI, LTD. 发明人 ANDREEV, ALEKSEY;WILLIAMS, DAVID;TSUCHIYA, RYUTA;WATANABE, KEIJI;SAITO, SHINICHI
分类号 H01L29/15;H01L31/0352 主分类号 H01L29/15
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